The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Dec. 27, 2000
Applicant:
Inventor:
Michael S. Lacy, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
In a method for manufacturing a test pattern wafer, a silicon substrate is provided. A sacrificial oxide layer is deposited over the silicon substrate, and simulated transistor structure test features are fabricated into and on the sacrificial oxide layer. Chemical mechanical polishing characterization is performed using the test pattern wafer which provides data for the characterization of the chemical mechanical polishing. The sacrificial oxide layer is then stripped along with the simulated transistor structure test features, allowing the silicon substrate to be reclaimed and to be used in the fabrication of subsequent test pattern wafers.