The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Mar. 17, 2003
Applicant:
Inventors:
Sang Su Kim, Suwon, KR;
Nae-In Lee, Seoul, KR;
Geum-Jong Bae, Suwon, KR;
Ki Chul Kim, Suwon, KR;
Hwa Sung Rhee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/710 ;
U.S. Cl.
CPC ...
H01L 2/710 ;
Abstract
A notched gate SONOS transistor includes: a substrate having source/drain regions; a gate insulator layer on the substrate between the source/drain regions; a notched gate structure, on the gate insulator leyer, having at least one notch; and at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.