The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Nov. 26, 2002
Christian Zistl, Dresden, DE;
Jörg Hohage, Dresden, DE;
Hartmut Rülke, Dresden, DE;
Peter Hübler, Coswig, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A copper line that is formed in a patterned dielectric layer has a copper/silicon film formed on a surface thereof to substantially suppress an electromigration path through this surface. In an in situ process, the exposed copper surface is first cleaned by a reactive plasma ambient including nitrogen and ammonia and after a certain clean period, a gaseous compound comprising silicon, for example silane, is added to the reactive plasma ambient to form the copper/silicon film. Additionally, a capping layer may be deposited, wherein due to the copper/silicon film, any deposition technique or even spin-coating may be used.