The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Nov. 15, 2002
Applicant:
Inventors:
Chang-seok Kang, Kyungki-do, KR;
Doo-sup Hwang, Kyungki-do, KR;
Cha-young Yoo, Kyungki-do, KR;
Young-wook Park, Kyungki-do, KR;
Hong-bae Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
Methods and apparatus for plasma annealing layers of a microelectronic capacitor on a substrate are provided to improve the leakage current characteristics of a capacitor and/or to reduce the number of impurities in an electrode.