The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Aug. 22, 2002
Applicant:
Inventors:
Suvi Haukka, Helsinki, FI;
Eric Shero, Phoenix, AZ (US);
Christophe Pomarede, Phoenix, AZ (US);
Jan Willem Hub Maes, Hevelee, BE;
Marko Tuominen, Helsinki, FI;
Assignee:
ASM International, N.V., Bilthoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1473 ;
U.S. Cl.
CPC ...
H01L 2/1473 ;
Abstract
The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed. The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300° C.