The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Oct. 09, 2002
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
Abstract
A method of fabricating a metal-insulator-metal (MIM) capacitor of a semiconductor device having an upper and lower electrode formed of metal is provided. Portions of a conductive layer for a lower electrode on inner walls of holes are not removed. Portions of the conductive layer for a lower electrode outside the holes are selectively etched back and node-separated.