The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2004

Filed:

Mar. 26, 2003
Applicant:
Inventor:

Akira Nakashima, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/00 ; C30B 3/300 ; B26D 7/01 ;
U.S. Cl.
CPC ...
B32B 1/00 ; C30B 3/300 ; B26D 7/01 ;
Abstract

It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nanotopography, and wafer warpage. The inventors perfected the present invention upon discovering that when retainer plates are bonded to or pressed against the ends of an ingot, and simultaneous slicing with a wire saw is performed along with the retainer plates, a portion of increasing variance in the warpage, nanotopography, and thickness will appear in the portions corresponding to the retainer plates, resulting in a decrease in variance in wafer warpage, nanotopography, and thickness at the ends of the targeted ingot.


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Nakashima, Akira. (2004). Method for cutting hard and brittle material (U.S. Patent No. 6802928). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6802928

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