The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Sep. 21, 2001
Bernard Beaumont, Valbonne, FR;
Pierre Gibart, Chateauneuf de Grasse, FR;
Jean-Claude Guillaume, La Gaude, FR;
Gilles Nataf, Cagnes sur Mer, FR;
Michel Vaille, Antibes, FR;
Soufien Haffouz, Nice, FR;
Lumilog, Vallauris, FR;
Abstract
A process for producing an epitaxial layer of gallium nitride (GaN). A film of a dielectric whose thickness is about one monolayer is formed on a surface of a substrate. A continuous gallium nitride layer is then deposited on the dielectric film at a temperature sufficiently low to suppress island formation of the gallium nitride. The deposited gallium nitride layer is annealed at a temperature sufficiently high to promote island formation of the gallium nitride. An epitaxial regrowth with gallium nitride at the end of a spontaneous in situ formation of islands of gallium nitride then takes place. This method makes it possible to avoid having to use ex situ etching of masks by photolitographiy or chemical ethching techniques.