The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Sep. 26, 2000
Applicant:
Inventors:
Gengying Gao, Fremont, CA (US);
Mohan Yegnashankaran, Redwood City, CA (US);
Hengyang (James) Lin, San Jose, CA (US);
Kevin Weaver, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/1302 ;
U.S. Cl.
CPC ...
G01R 3/1302 ;
Abstract
A method for non-destructively testing an IC device to determine the ESD performance. A laser beam is used to probe the diffusions of the device. The amount of light absorbed by the diffusions is determined by monitoring the degree to which light is reflected by the device. The amount of reflection is related to the ESD susceptibility of the device in that the greater the amount of reflection, the worse the ESD performance of the device.