The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Jul. 02, 2002
Applicant:
Inventor:
Effiong Ibok, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
In one embodiment, a process for fabricating a high-K layer comprising the steps of: placing a semiconductor substrate into a first chamber of a deposition apparatus; supplying high-K precursors to the deposition apparatus; generating ions or molecules of high-K material from the high-K precursors in a second chamber of the deposition apparatus, the second chamber being remote from the first chamber; passing the ions or molecules of high-K material from the second chamber to the first chamber; and depositing a high-K layer upon the semiconductor substrate.