The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2004

Filed:

Jul. 16, 2002
Applicant:
Inventors:

Charles W. Schietinger, Milwaukie, OR (US);

Ronald A. Palfenier, Oregon City, OR (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 1/130 ; G06F 1/500 ;
U.S. Cl.
CPC ...
G01K 1/130 ; G06F 1/500 ;
Abstract

The temperature of a semiconductor wafer ( ) is measured while undergoing processing in a plasma ( ) environment. At least two pyrometers ( ) receive radiation from, respectively, the semiconductor wafer and the plasma in a plasma process chamber. The first pyrometer receives radiation from either the front or rear surface of the wafer, and the second pyrometer receives radiation from the plasma. Both pyrometers may be sensitive to the same radiation wavelength. A controller ( ) receives signals from the first and second pyrometers and calculates a corrected wafer emission, which is employed in the Planck Equation to calculate the wafer temperature. Alternatively, both pyrometers are positioned beneath the wafer with the first pyrometer sensitive to a first wavelength where the wafer is substantially opaque to plasma radiation, and the second pyrometer is sensitive to a wavelength where the wafer is substantially transparent to plasma radiation.


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