The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
May. 23, 2003
Gerhard Müller, Meitingen, DE;
Till Schlösser, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An integrated memory with a configuration of non-volatile memory cells based on ferromagnetic storage contains both powerful memory cells with a magnetoresistive effect with a transistor control and cost-effective memory cells with a magnetoresistive effect with memory elements connected between the word lines and bit lines. The memory elements connected directly between the bit line and the word line are preferably inserted in memory cell arrays that can be stacked one above the other above the memory cells with the transistor, and thereby achieve a high integration density. The fact that the memory, which contains both types and thereby satisfies all the system requirements, is fabricated in one module and in one process sequence considerably lowers the fabrication costs.