The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6798027 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 28, 2004

Filed:

Feb. 25, 2003
Applicant:
Inventor:

Sadaaki Masuoka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract

A method for forming three gate oxide films having different thickness in first through third circuit areas, respectively. The method includes the consecutive steps of forming a first gate oxide film having a largest thickness in all the areas, removing the first gate oxide film and forming a second gate oxide film having a second largest thickness in the second circuit area, and removing the first gate oxide and forming a third gate oxide film having a smallest thickness in the third circuit area. The resultant gate oxide films have accurate thicknesses.


Find Patent Forward Citations

Masuoka, Sadaaki. (2004). Semiconductor device including gate insulation films having different thicknesses (U.S. Patent No. 6798027). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6798027

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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