The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Jun. 06, 2003
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device includes a diffusion region in a semiconductor substrate, a gate insulation film on the semiconductor substrate, a gate electrode on the gate insulation film, an interlayer insulation film on the semiconductor substrate covering the gate electrode, and a capacitor on the interlayer insulation film. The capacitor includes a laminated structure made up of a lower electrode, a dielectric film, and an upper electrode. The diffusion region, the gate electrode, and the lower electrode are connected to one another by a common contact in the interlayer insulation film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile