The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Apr. 18, 2003
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a MEM device with an integrated circuit that includes providing a semiconductor substrate including a first region and a second region, forming an integrated circuit device on the first region, forming a first insulating layer on the semiconductor substrate, etching the first insulating layer to form a first dielectric layer on the first region and a second dielectric layer on the second region spaced apart from the first dielectric layer, forming a second insulating layer over the semiconductor substrate, the first dielectric layer and the second dielectric layer, etching the second insulating layer to expose the first dielectric layer, forming a third insulating layer over the semiconductor substrate, the second insulatng layer and the first dielectric layer, etching the third insulating layer to form a plurality of vias, and forming a metal layer over the semiconductor substrate to fill the vias.