The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Jul. 31, 2003
Shiqun Gu, Vancouver, WA (US);
Masaichi Eda, Gresham, OR (US);
Peter McGrath, Portland, OR (US);
Hong Lin, Vancouver, WA (US);
Jim Elmer, Vancouver, WA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method of making a semiconductor device includes providing a first element formed of a first substantially electrically conductive material and having an upper surface. A second element adjacent to the first element is provided. The second element is formed of a first substantially non-electrically conductive material. An upper surface of the second element slopes downwardly toward the upper surface of the first element. A first layer of a second substantially non-electrically conductive material is disposed over the upper surface of the first element and the upper surface of the second element. The first layer has a thickness in the vertical direction that is greater in an area over the downward slope of the second element than in an area over the first element. An etching process is performed such that the layer is perforated above the upper surface of the first element and imperforated in the vertically thicker area above the downwardly sloping upper surface of the second element.