The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Apr. 02, 2002
Takaharu Kondo, Kyoto, JP;
Shotaro Okabe, Nara, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Yuzo Koda, Kyoto, JP;
Ryo Hayashi, Nara, JP;
Shuichiro Sugiyama, Kyoto, JP;
Koichiro Moriyama, Kyoto, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.