The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Oct. 01, 2002
Applicant:
Inventor:
Jürgen Knobloch, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract
A photolithographic fabrication method for a microstructure on a substrate, in particular interconnects of a DRAM (dynamic random access memory), includes a first exposure with at least one alternating phase mask. Then, at least one postexposure is carried out after the first exposure with a trimming mask. The trimming mask has at least two trimming openings for producing at least one alternating phase shift. Postexposure even of very small parts of microstructures is thus possible, so that the entire microstructure can be arranged in a space-saving manner on the substrate.