The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Apr. 19, 2001
Takeshi Saito, Yamanashi, JP;
Kazuya Nagaseki, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A wafer W is placed on a lower electrode provided inside a processing chamber of an etching apparatus and a gas containing C4F8 is induced into the processing chamber . A controller implements control to apply 27 MHz power to an upper electrode from a plasma generating power supply and to intermittently apply 800 KHz power to the lower electrode from a biasing power supply . While the biasing power is on, an insulating film constituted of SiO2 at the wafer W is etched, whereas a polymer (protective film) is formed at a photoresist film while the biasing power is off. Adopting the above method, contact holes achieving a specific shape can be formed by improving the selectivity of the insulating film relative to the photoresist film.