The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Aug. 29, 2002
Catherine B. Labelle, San Jose, CA (US);
Bhanwar Singh, Morgan Hill, CA (US);
Bharath Rangarajan, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
One aspect of the present invention relates to a system for determining and controlling a microloading effect in order to achieve desired feature depth on a wafer. The system includes a semiconductor structure having one or more layers formed over a substrate, a fabrication process assembly for forming features on the semiconductor structure, a microloading characterization system for monitoring the fabrication process, measuring feature depth, and for processing the measurements in order to ascertain the microloading effect, a detection apparatus operatively coupled to the microloading characterization system to facilitate monitoring the fabrication process and measuring feature depth, and a control system for regulating the fabrication process based on the output from the microloading characterization system. Thus, forming features having a first density and features having a second density on the same layer may be formed using one photomask since fabrication parameters can be adjusted based on the determined microloading effect.