The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2004

Filed:

Jun. 11, 2001
Applicant:
Inventors:

Jeffrey S. Brown, Fort Collins, CO (US);

Craig R. Chafin, Fort Collins, CO (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/750 ; G01R 3/126 ; H01L 2/362 ;
U.S. Cl.
CPC ...
G06F 1/750 ; G01R 3/126 ; H01L 2/362 ;
Abstract

Disclosed is an improved hard macro design for use in an ASIC, which avoids undesirable buildup of electrostatic charge on a gate of an I/O transistor of the hard macro. The hard macro includes a port level metallic conductor of an I/O port positioned at a low level metalization layer and an electrical connection between the port level metallic conductor and a gate conductor of the I/O transistor. The electrical connection includes a first conducting section extending from the gate conductor to a top level metallic conductor at a highest level metalization layer and a second conducting section extending from the top level metallic conductor layer to the port level conductor. Antenna rule violations at the I/O port of the hard macro are eliminated due to the electrical connection between the top level metallic conductor and a diffusion region.


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