The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2004

Filed:

Aug. 29, 2001
Applicant:
Inventors:

Taisei Hirayama, Akishima, JP;

Masanobu Inami, Fussa, JP;

Shuichi Matsuo, Oume, JP;

Koichiro Ito, Osaka, JP;

Ryo Hattori, Tokyo, JP;

Yoshitugu Yamamoto, Tokyo, JP;

Yoshihiro Notani, Tokyo, JP;

Shinichi Miyakuni, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/500 ;
U.S. Cl.
CPC ...
G01N 2/500 ;
Abstract

In a sample assembly for a thermoelectric analyzer, typically TSC (Thermally Stimulated Current) analyzer, a sample is fixed to an electrically-insulating substrate via an adhesive layer. The material of the adhesive layer is indium or gold-tin alloy. The substrate has a pair of junction electrode layers formed thereon and a pair of electrode layers formed on the same plane of the sample. One of the electrode layers is connected with one of the junction electrode layers by electrically-conductive wire, while the other of the electrode layers is connected with the other of the junction electrode layers by another electrically-conductive wire. The substrate is made of preferably made of a highly electrically-insulating and highly thermally-conductive material which may be, for example, aluminum nitride (AlN), boron nitride (BN), beryllium oxide (BeO) or aluminum oxide (Al O ). The sample may preferably be a compound semiconductor such as GaAs.


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