The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
Feb. 14, 2003
Fumihiko Noro, Kyoto, JP;
Seiki Ogura, Wappingers Falls, NY (US);
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor memory has first and second active regions that have been defined in a semiconductor substrate and electrically isolated from each other. Over the first active region, a control gate electrode has been formed with a control gate insulating film interposed therebetween. A floating gate electrode has been formed adjacent to a side face of the control gate electrode with a capacitive insulating film interposed therebetween. A tunnel insulating film is interposed between the first active region and the floating gate electrode. A gate electrode has been formed over the second active region with a gate insulating film interposed therebetween. Source/drain regions have been defined in respective parts of the second active region beside the gate electrode. Only the source/drain regions and the gate electrode have their upper surface covered with a metal silicide film.