The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
Dec. 29, 2003
Cheolsoo Park, Seoul, KR;
Dongbu Electronics, Seoul, KR;
Abstract
Method for forming contact electrodes in a semiconductor device are disclosed. An example method comprises sequentially forming a pad oxide layer, a pad nitrate layer, a dummy oxide layer, and a capping nitride layer on a substrate. These layers and the substrate are then patterned to form a trench. The trench us filled with an insulating material to form a device isolation stripe. The resulting structure is then patterned to form a trench. Spacers are formed on the sidewalls of the trench and ions are implanted into the substrate beneath the trench to form local channel portions. A gate insulating layer and a gate electrode are then formed by deposition. Thereafter, the dummy oxide layer and the capping nitride layer are removed and source/drain portions are defined. Contact electrodes are then formed by deposition of a metal layer.