The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2004

Filed:

Sep. 07, 2001
Applicant:
Inventors:

Jun Hatakeyama, Kubiki-mura, JP;

Yuji Harada, Kubiki-mura, JP;

Jun Watanabe, Kubiki-mura, JP;

Yoshio Kawai, Kubiki-mura, JP;

Masaru Sasago, Osaka, JP;

Masayuki Endo, Osaka, JP;

Shinji Kishimura, Itami, JP;

Michitaka Ootani, Kawagoe, JP;

Satoru Miyazawa, Kawagoe, JP;

Kentaro Tsutsumi, Kawagoe, JP;

Kazuhiko Maeda, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/038 ; G03F 7/38 ; G03F 7/40 ; G03F 7/30 ;
U.S. Cl.
CPC ...
G03F 7/038 ; G03F 7/38 ; G03F 7/40 ; G03F 7/30 ;
Abstract

A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.


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