The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2004

Filed:

Aug. 05, 2002
Applicant:
Inventors:

Hung Q. Nguyen, Fremont, CA (US);

Sang Thanh Nguyen, Union City, CA (US);

Loc B. Hoang, San Jose, CA (US);

Tam M. Nguyen, San Jose, CA (US);

Assignee:

Silicon Storage Technology, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

Predetermined data is stored in first and second predetermined locations of a memory. The first location may be in a first part of the memory, and the second location may be in a redundant part of the memory. At power up or reset, the first predetermined location of the memory successively is read and compared to data stored in a register until the comparison indicates a match for a predefined number of consecutive reads and comparisons. The successive reading may be stopped if the number of comparisons indicating a failure equals another predefined number of times. The data stored in the second predetermined location also is read. This data may be compared to the data previously read from the second predetermined location. The reading and comparing from the first predetermined location and the reading from the second predetermined location are continued until the number of times data is read from the second predetermined location equals a third predetermined number. The voltage signal is then determined to be valid after sufficient successive reads of the first predetermined location of the memory.


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