The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Nov. 22, 2002
Applicant:
Inventors:
Tsukasa Ooishi, Hyogo, JP;
Masatoshi Ishikawa, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/114 ;
U.S. Cl.
CPC ...
G11C 1/114 ;
Abstract
A tunneling magneto-resistance element forming an MTJ memory cell is connected between a bit line and a strap. In each memory cell column, the strap is shared by the plurality of tunneling magneto-resistance elements in the same row block. The access transistor is connected between strap and ground voltage, and is turned on/off in response to a corresponding word line. Storage data is read from the selected memory cell based on a comparison between results of data reading effected on a memory cell group coupled to the same strap before and after application of a predetermined magnetic field to the selected memory cell.