The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Aug. 04, 2000
Applicant:
Inventors:
Yukihiro Nagai, Tokyo, JP;
Tomoharu Mametani, Tokyo, JP;
Yoji Nakata, Tokyo, JP;
Shigenori Kido, Tokyo, JP;
Takeshi Kishida, Hyogo, JP;
Akinori Kinugasa, Tokyo, JP;
Hiroaki Nishimura, Tokyo, JP;
Jiro Matsufusa, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/1332 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/1332 ;
Abstract
In a semiconductor device, an active region is formed in a semiconductor substrate separated by a plurality of isolation regions. A plurality of surface insulating films of different thickness are formed separately on the active region. A plurality of conductive films are formed on the respective insulating films. Then, one of the surface insulating film having smaller thickness is caused to break down to work as an electric fuse.