The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Mar. 14, 2003
Hua Quen Tserng, Dallas, TX (US);
Edward A. Beam, III, Plano, TX (US);
Ming-Yih Kao, Dallas, TX (US);
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
A high electron mobility transistor is constructed with a substrate, a lattice-matching buffer layer formed on the substrate, and a heavily doped p-type barrier layer formed on the buffer layer. A spacer layer is formed on the barrier layer, and a channel layer is formed on the spacer layer. The channel layer may be of uniform composition, or may be made from two or more sublayers. A Schottky layer is formed over the channel layer, and source and drain contacts are formed on the Schottky layer. The substrate may be gallium arsenide, indium phosphide, or other suitable material, and the various semiconductor layers formed over the substrate contain indium. The transistor's transition frequency of the transistor is above 200 GHz.