The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Jan. 31, 2002
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01L 3/10328 ; H01L 2/1338 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01L 3/10328 ; H01L 2/1338 ;
Abstract
A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type In Ga Al N film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type In Ga Al N film formed on a GaN film on a substrate, a gate electrode formed on the In Ga Al N film, and source and drain electrodes formed on either side of the gate electrode on the In Ga Al N film.