The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Dec. 17, 2002
Herschel M. Marchman, Poughquag, NY (US);
Aaron D. Shore, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and apparatus for editing an integrated circuit by bombarding a feature in need of editing with either a low-energy or high-energy electron beam in the presence of a gas whereby low energy electrons activate reactants adsorbed on the surface of the feature in need of editing to form active species on the feature surface. The reaction products from the process can be easily removed whereby IC damage, leakage between metal features, wafer contamination and physical sputtering of undesired material can be significantly minimized while still possessing nanometer-scale spatial resolution. The low energy electrons for activating the reactants adsorbed on the surface of the feature to be edited may be emitted from the electron beam itself or they may be secondary low energy is electrons emitted from the surface of the feature being edited.