The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Jun. 10, 2002
Applicant:
Inventors:
Eiji Hayashi, Ibaraki, JP;
Atsushi Shiota, Ibaraki, JP;
Michinori Nishikawa, Ibaraki, JP;
Kinji Yamada, Ibaraki, JP;
Assignee:
JSR Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/800 ; B32B 9/04 ; B05D 3/02 ;
U.S. Cl.
CPC ...
B32B 1/800 ; B32B 9/04 ; B05D 3/02 ;
Abstract
A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.