The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Feb. 03, 2003
Applicant:
Inventors:
Xikun Wang, Sunnyvale, CA (US);
Scott Williams, Sunnyvale, CA (US);
Shaoher X. Pan, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 ;
U.S. Cl.
CPC ...
C23F 1/00 ;
Abstract
A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF and Ar, the volumetric flow ratio of SF to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF and Ar, the volumetric flow ratio of CF to other components of the second process gas being from about 1:0 to about 1:10.