The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Sep. 04, 2002
Chien-Wei Chen, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Nonvolatile memory devices, such as NROM devices that have an oxide-nitride-oxide (ONO) layer beneath at least one word line structure, and methods for making same, are disclosed. The ONO layer is formed on a substrate, followed by a patterned photoresist layer being formed on the ONO layer. The patterned photoresist layer then serves as an implanting mask to form at least one bit line in the substrate, followed by a material layer being formed on the substrate. The material layer is planarized until the photoresist layer is exposed, and the photoresist layer is then removed. A polymer layer is formed, using a dielectric resolution enhancement coating technique, on exposed surfaces of the material layer, with the polymer layer serving as an etching mask to define the top oxide layer and the nitride layer of the ONO layer. The polymer layer and the material layer are then removed.