The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Oct. 24, 2002
Applicant:
Inventor:
Tomoyuki Irizumi, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
In a method for manufacturing a semiconductor device having a USG film formed on a semiconductor substrate in which an N+-type active region and a P+-type active region are formed, an oxide film is formed on the semiconductor substrate and the USG film is formed on the oxide film . Because the influence of the characteristic difference of an underlying layer on the formation of the USG film can be avoided due to the existence of the oxide film, the USG film can be formed in a uniform thickness over regions including the semiconductor substrate , the P+-type active region and the N+-type active region