The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Apr. 30, 2001
Chine-Gie Lou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method is provided for forming salicided surfaces to a FET device. Gate electrodes are formed including Ti/TiN salicided contact surface regions thereto. A thin layer of silicon oxide and a thick layer of photoresist are deposited. The layer of photoresist is polished, stopping on a top layer of BN of the gate electrode. The exposed layer of BN is removed. A thick layer of Ti/TiN is next deposited and annealed, forming TiSi after which unreacted Ti/TiN is removed. A high temperature anneal is applied to reduce the sheet resistance of the layer of TiSi . As an alternate approach to the above cited sequence the layer of photoresist can be replaced with a layer of boro-phosphate-silicate-glass (BPSG), the layer of BN can be replaced with a layer of silicon nitride.