The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Oct. 15, 2002
Shih-Chi Lin, Taipei, TW;
Chih Chung Lee, Taichung, TW;
Guey Bao Huang, Hsin-Chu, TW;
Szu-An Wu, Hsin-Chu, TW;
Ying Lang Wang, Tai-Chung, TW;
Chun Chun Yeh, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Abstract
A method of forming a silicon oxide, shallow trench isolation (STI) region, featuring a silicon rich, silicon oxide layer used to protect the STI region from a subsequent wet etch procedure, has been developed. The method features depositing a silicon oxide layer via PECVD procedures, without RF bias, using a high silane to oxygen ratio, resulting in a silicon rich, silicon oxide layer, located surrounding the STI region. The low etch rate of the silicon rich, silicon oxide layer, protect the silicon oxide STI region from buffered hydrofluoric wet etch procedures, used for removal of a dioxide pad layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile