The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6784047 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 31, 2004

Filed:

Jan. 13, 2001
Applicant:
Inventors:

Hiroaki Tsugane, Sakata, JP;

Hisakatsu Sato, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18244 ;
U.S. Cl.
CPC ...
H01L 2/18244 ;
Abstract

Certain embodiments of the present invention relate to a method for manufacturing a semiconductor device in which, when a cell capacitor of a DRAM and a capacitor element in an analog element region are mix-mounted on the same chip, the manufacturing steps can be simplified. First, the connection layer and the bit line are simultaneously formed. Next, the lower electrodes and of the capacitor elements and and the storage nodes and of the cell capacitors and are simultaneously formed. Next, a dielectric layer (ON layer ) of the capacitor elements and and a dielectric layer (ON layer ) of the cell capacitors and are simultaneously formed. Then, the upper electrodes and of the capacitor elements and and the cell plate of the cell capacitors and are simultaneously formed.


Find Patent Forward Citations

Tsugane, Hiroaki. (2004). Semiconductor devices and methods for manufacturing the same (U.S. Patent No. 6784047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6784047

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