The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Aug. 15, 2001
Yoshikazu Tanabe, Iruma, JP;
Naoki Yamamoto, Kawaguchi, JP;
Shinichiro Mitani, Tokorozawa, JP;
Yuko Hanaoka, Kodaira, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A , and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractor metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.