The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Oct. 06, 2001
Applicant:
Inventors:
Assignee:
Fujikura Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/446 ;
U.S. Cl.
CPC ...
C23C 1/446 ;
Abstract
A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10 Pa or lower while keeping the substrate temperature at 300° C. or lower.