The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Aug. 01, 2002
Akio Uenishi, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Isolation regions, a peripheral anode, an N-type island region for output and a passive N-type island region are formed at the main surface of a P substrate. A dummy N-type island region is formed at a region located between two isolation regions. A P-type region is formed at the surface of this N well. A pair of N type regions are formed at the surface of P-type region. A gate electrode is formed on a portion of P-type region interposed between N type regions. N type region is connected to ground while N type region is electrically connected to isolation region. Accordingly, current is restricted from flowing between the N-type island region for output and the passive N-type island region so as to obtain a semiconductor device in which occurrence of malfunctions is prevented.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile