The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Oct. 21, 2003
Applicant:
Inventors:
Yuji Hori, Nagoya, JP;
Tomohiko Shibata, Kasugai, JP;
Osamu Oda, Nishikasugai-Gun, JP;
Mitsuhiro Tanaka, Handa, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/1072 ;
Abstract
An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 10 /cm or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 10 /cm or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.