The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Aug. 07, 2002
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
Novel methods for improving the within-wafer uniformity of a gate oxide layer on a semiconductor wafer substrate. According to a first embodiment, a gate oxide layer is formed on a wafer using conventional oxidation parameters and equipment. Next, the edge-thick gate oxide layer is nitridated using a center-thick plasma nitridation profile to enhance uniformity in thickness of the gate oxide layer between the center region and the edge or peripheral regions of the wafer. According to a second embodiment, the wafer substrate is first nitridated and then oxidized to form the gate oxide layer. The nitrogen incorporated into the wafer surface during the nitridation step retards oxidation of the wafer at the wafer edge to enhance uniformity in thickness of the gate oxide layer between the center region and the edge or peripheral regions of the wafer.