The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Oct. 01, 2001
Applicant:
Inventors:
Shari N. Farrens, Davis, CA (US);
Mark A. Franklin, Plano, TX (US);
William J. Franklin, Felton, CA (US);
Wei Liu, San Jose, CA (US);
Assignee:
Silicon Genesis Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10L 2/358 ;
U.S. Cl.
CPC ...
H10L 2/358 ;
Abstract
A method and technique for achieving a high strength bond between two substrates includes igniting a plasma using a source RF signal. The substrates are biased with a bias RF signal during surface treatment by the plasma. The treated surfaces are brought into contact. The resulting bonded substrates show an improvement over bonds attained using conventional bonding techniques.