The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Oct. 15, 2002
Applicant:
Inventors:
D. Mark Durcan, Boise, ID (US);
Roger Lee, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of forming memory devices, such as DRAM access transistors, having recessed gate structures is disclosed. Field oxide areas for isolation are first formed over a semiconductor substrate subsequent to which transistor grooves are patterned and etched in a silicon nitride layer. The field oxide areas adjacent to the transistor grooves are then recessed, so that subsequently deposited polysilicon for gate structure formation can be polished relative to the adjacent and elevated silicon nitride.