The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Mar. 15, 2001
Applicant:
Inventor:
Roger Lee, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of forming self-aligned MRAM contacts is disclosed. MRAM stacks including an upper layer of a conductive material are formed over portions of integrated circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The insulating material is subsequently chemically mechanically polished or etched, stopping on the upper layer of conductive material, to expose portions of the conductive material which are used as self-aligned MRAM contacts.