The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Dec. 19, 2002
Peter Richard Duncombe, Peekskill, NY (US);
Daniel Charles Edelstein, New Rochelle, NY (US);
Robert Benjamin Laibowitz, Peekskill, NY (US);
Deborah Ann Neumayer, Danbury, CT (US);
Tak Hung Ning, Yorktown Heights, NY (US);
Robert Rosenberg, Cortlandt Manor, NY (US);
Thomas Mcarraoll Shaw, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.