The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Dec. 27, 2002
Masashi Shima, Kawasaki, JP;
Tetsuji Ueno, Kawasaki, JP;
Yoshiki Sakuma, Ebina, JP;
Shunji Nakamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device includes a channel layer, a gate electrode formed on the channel layer, a p-type source region formed on a first side of the channel layer, and a p-type drain region formed on a second side of the channel layer. A heavy-hole band and a light-hole band are separated by compressive strain applied isotropically in an in-plane direction in the channel layer. A channel direction connecting the p-type source and drain regions is set substantially to a direction to maximize hole mobility in the channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile