The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Apr. 29, 2002
Keng-Chu Lin, Ping-Tung, TW;
Chih-Ta Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for reducing preferential chemical mechanical polishing (CMP) of a silicon oxide filled shallow trench isolation (STI) feature during an STI formation process including providing a semiconductor wafer having a process surface including active areas for forming semiconductor devices thereon; forming a silicon oxynitride layer over the process surface for photolithographically patterning STI trenches around the active areas; photolithographically patterning STI trenches around the active areas for anisotropic etching; anisotropically etching the STI trenches extending through the silicon oxynitride layer into the semiconductor wafer; depositing a silicon oxide layer over the silicon oxynitride layer to include filling the STI trenches; and, performing a CMP process to remove the silicon oxide layer overlying the silicon oxynitride layer to reveal an upper surface of the silicon oxynitride layer.