The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Dec. 18, 2001
Akihiko Ishibashi, Sakai, JP;
Ayumu Tsujimura, Mishima-gun, JP;
Yasutoshi Kawaguchi, Neyagawa, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Kiyoshi Ohnaka, Sakai, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of Al Ga N (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of Al Ga In N (0<u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) over the first semiconductor layer. In the step (1), the mole fraction x of Al of the first semiconductor layer is set so that the lattice constant of the first semiconductor layer at room temperature substantially matches with the lattice constant of the second semiconductor layer in the bulk state after thermal shrinkage or thermal expansion.